Discrete Semiconductor Products

HTNFET-T

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MOSFET N-CH 55V 4POWER TAB

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Discrete Semiconductor Products

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MOSFET N-CH 55V 4POWER TAB

Technical Specifications

Parameters and characteristics for this part

Specification	HTNFET-T

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	290 pF
Mounting Type	Through Hole
Operating Temperature [Max]	225 °C
Operating Temperature [Min]	-55 ░C
Package / Case	4-SIP
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	4-Power Tab
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs(th) (Max) @ Id	2.4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Mounting Type	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max) [Max]
Honeywell Aerospace HTNFET-T	55 V	4.3 nC	400 mOhm	N-Channel	4-Power Tab	Through Hole	MOSFET (Metal Oxide)	50 W	290 pF	5 V	4-SIP	-55 ░C	225 °C	2.4 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 55 V 50W (Tj) Through Hole 4-Power Tab

Technical documentation and resources