Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MCB20P1200LB-TRR |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Mounting Type | Surface Mount |
| Package / Case | 9-PowerSMD |
| Supplier Device Package | 9-SMPD-B |
| Technology | Silicon Carbide (SiC) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | 1m+ |
Description
General part information
MCB20P1200LB Series
1200V, 80mΩ SiC MOSFETs in a phase leg configuration, built in a top side cooled SMPD-B package. Thanks to the characteristics of the SiC material, this product delivers superior performance in terms of switching speed and low switching losses as compared to silicon mosfets in the same voltage class. It is recommended for use in high speed, high voltage industrial switch mode power supplies where low power losses, high switching speed and high power density are important requirements.
Documents
Technical documentation and resources
