Specification	EMX2DXV6T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	180 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	357 mW
Supplier Device Package	SOT-563
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

EMX2DXV6 Series

Dual NPN Bipolar Transistor

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Mounting Type	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case
ON Semiconductor EMX2DXV6T1G	100 mA	180 MHz	Surface Mount	2 NPN (Dual)	-55 °C	150 °C	357 mW	SOT-563	120	500 nA	50 V	400 mV	SOT-563 SOT-666

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

EMX2DXV6 Series

This Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.

Documents

Technical documentation and resources

Package Drawing-463A-01-SOT-563-6 1.60x1.20x0.55, 0.50P

Package Drawing