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SOT1118
Discrete Semiconductor Products

PMCPB5530X,115

Active
Nexperia USA Inc.

20 V, COMPLEMENTARY TRENCH MOSFET

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SOT1118
Discrete Semiconductor Products

PMCPB5530X,115

Active
Nexperia USA Inc.

20 V, COMPLEMENTARY TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMCPB5530X,115
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C4 A, 3.4 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs [Max]21.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]660 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]490 mW
Rds On (Max) @ Id, Vgs34 mOhm
Supplier Device Package6-HUSON (2x2)
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.47
10$ 0.40
100$ 0.28
500$ 0.22
1000$ 0.18
Digi-Reel® 1$ 0.47
10$ 0.40
100$ 0.28
500$ 0.22
1000$ 0.18
N/A 90$ 0.96
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
30000$ 0.14

Description

General part information

PMCPB5530X Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.