Discrete Semiconductor Products

PMCPB5530X,115

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MOSFET N/P-CH 20V 4A/3.4A 6HUSON

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Discrete Semiconductor Products

Active

MOSFET N/P-CH 20V 4A/3.4A 6HUSON

Technical Specifications

Parameters and characteristics for this part

Specification	PMCPB5530X,115

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A, 4 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	21.7 nC
Input Capacitance (Ciss) (Max) @ Vds	660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	490 mW
Rds On (Max) @ Id, Vgs	34 mOhm
Supplier Device Package	6-HUSON (2x2)
Vgs(th) (Max) @ Id	900 mV

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Mounting Type	Package / Case
Freescale Semiconductor - NXP PMCPB5530X,115	3.4 A 4 A	21.7 nC	490 mW	34 mOhm	6-HUSON (2x2)	660 pF	900 mV	20 V	-55 °C	150 °C	N and P-Channel	Surface Mount	6-UFDFN Exposed Pad

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General part information

Mosfet Array 20V 4A (Ta), 3.4A (Ta) 490mW Surface Mount 6-HUSON (2x2)

Technical documentation and resources