Discrete Semiconductor Products
DMTH8008LFGQ-7
ActiveDiodes Inc
POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 80V, 0.0069OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,
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Discrete Semiconductor Products
DMTH8008LFGQ-7
ActiveDiodes Inc
POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 80V, 0.0069OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH8008LFGQ-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A, 17 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37.7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2254 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 50 W, 1.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 6.9 mOhm |
| Supplier Device Package | POWERDI3333-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMTH8008LFGQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.
Documents
Technical documentation and resources