Discrete Semiconductor Products

CGRC506-G

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DIODE GEN PURP 800V 5A DO214AB

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 5A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	CGRC506-G

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	DO-214AB, SMC
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Package / Case	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Speed [Min]
Comchip Technology CGRC506-G	DO-214AB SMC	Standard	DO-214AB (SMC)	150 °C	Surface Mount	10 µA	5 A	1.15 V	800 V	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 5A Surface Mount DO-214AB (SMC)

Technical documentation and resources

No documents available