Discrete Semiconductor Products

GI1-1600GPHE3/73

Obsolete

DIODE GEN PURP 1.6KV 1A DO204AC

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 1.6KV 1A DO204AC

Technical Specifications

Parameters and characteristics for this part

Specification	GI1-1600GPHE3/73

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AC, DO-15, Axial
Reverse Recovery Time (trr)	1500 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-204AC
Supplier Device Package	DO-15
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Speed	Speed	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Supplier Device Package
Vishay General Semiconductor - Diodes Division GI1-1200GPHE3/54	Standard Recovery >500ns	200 mA	1500 ns	1 A	1.1 V	Axial DO-15 DO-204AC	Standard	175 ░C	-65 C	Through Hole	10 µA	1.2 kV	DO-204AC	DO-15
Vishay General Semiconductor - Diodes Division GI1-1600GPHE3/73	Standard Recovery >500ns	200 mA	1500 ns	1 A	1.1 V	Axial DO-15 DO-204AC	Standard	175 ░C	-65 C	Through Hole	10 µA		DO-204AC	DO-15

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1600 V 1A Through Hole DO-204AC (DO-15)

Technical documentation and resources