Discrete Semiconductor Products

BYC8B-600PQP

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DIODE GEN PURP 600V 8A D2PAK

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BYC8B-600PQP

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Reverse Recovery Time (trr)	18 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	600 V
Voltage - Forward (Vf) (Max)	3.4 V

Part	Technology	Voltage - Forward (Vf) (Max)	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Voltage - DC Reverse (Vr) (Max)	Package Name	Mounting Type	Operating Temperature - Junction (Max)	Reverse Recovery Time (trr)
NXP USA Inc. BYC8B-600PQP	Standard	3.4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8 A	20 µA	500 ns	200 mA	600 V	D2PAK	Surface Mount	175 °C	18 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

Diode 600 V 8A Surface Mount D2PAK

Technical documentation and resources

No documents available