Discrete Semiconductor Products

NDTL01N60ZT1G

Obsolete

600V 800MA 15Ω@10V,0.4A 26W 4.5V 1 N-CHANNEL SOT-223 MOSFETS ROHS

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Discrete Semiconductor Products

Obsolete

600V 800MA 15Ω@10V,0.4A 26W 4.5V 1 N-CHANNEL SOT-223 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	NDTL01N60ZT1G

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.9 nC
Input Capacitance (Ciss) (Max) @ Vds	92 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	15 Ohm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NDTL01N60ZT3G	600 V	92 pF	250 mA	30 V	4.9 nC	15 Ohm	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	10 V	N-Channel	SOT-223 (TO-261)	2 W	Surface Mount	4.5 V	-55 °C	150 °C
ON Semiconductor NDTL01N60ZT1G	600 V	92 pF	250 mA	30 V	4.9 nC	15 Ohm	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	10 V	N-Channel	SOT-223 (TO-261)	2 W	Surface Mount	4.5 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

LCSC	N/A	1	$ 0.00

General part information

N-Channel 600 V 250mA (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)

Technical documentation and resources