Discrete Semiconductor Products

ACMSN2312T-HF

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MOSFET N-CH 20V 4.9A SOT23-3

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Discrete Semiconductor Products

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MOSFET N-CH 20V 4.9A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	ACMSN2312T-HF

Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	750 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	31 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1.2 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Supplier Device Package	Grade	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type
Comchip Technology ACMSN2312T-HF	20 V	14 nC	AEC-Q101	150 °C	-55 °C	8 V	MOSFET (Metal Oxide)	4.9 A	31 mOhm	SC-59 SOT-23-3 TO-236-3	SOT-23-3	Automotive	1.2 V	750 mW	N-Channel	500 pF	Surface Mount

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General part information

N-Channel 20 V 4.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3

Technical documentation and resources

No documents available