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TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

KSC1674YBU

Obsolete

ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

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DocumentsDatasheet Package Drawing-135AN-TO-92 3 4.82x4.76

TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

KSC1674YBU

Obsolete

ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

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DocumentsDatasheet Package Drawing-135AN-TO-92 3 4.82x4.76

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	KSC1674YBU

Current - Collector (Ic) (Max) [Max]	20 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	600 MHz
Mounting Type	Through Hole
Noise Figure (dB Typ @ f) [Max]	5 dB
Noise Figure (dB Typ @ f) [Min]	3 dB
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	250 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

KSC1674 Series

RF Transistor NPN 20V 20mA 600MHz 250mW Through Hole TO-92-3

Documents

Technical documentation and resources

Datasheet

Package Drawing-135AN-TO-92 3 4.82x4.76

Package Drawing

KSC1674 Series

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Mounting Type	Transistor Type	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]	Frequency - Transition
ON Semiconductor KSC1674CYBU	20 mA	TO-92-3	120	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz
ON Semiconductor KSC1674RTA	20 mA	TO-92-3	40	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz
ON Semiconductor KSC1674CYTA	20 mA	TO-92-3	120	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz
ON Semiconductor KSC1674OTA	20 mA	TO-92-3	70	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz
ON Semiconductor KSC1674OBU	20 mA	TO-92-3	70	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz
ON Semiconductor KSC1674OBU	20 mA	TO-92-3	70	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz
ON Semiconductor KSC1674RBU	20 mA	TO-92-3	40	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz
ON Semiconductor KSC1674CYTA	20 mA	TO-92-3	120	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz
ON Semiconductor KSC1674YBU	20 mA	TO-92-3	120	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz
ON Semiconductor KSC1674OTA	20 mA	TO-92-3	70	150 °C	Through Hole	NPN	250 mW	TO-226-3 TO-92-3	20 V	5 dB	3 dB	600 MHz