Discrete Semiconductor Products

PMV55ENEAR

NRND

PMV55ENEA - 60 V, N-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

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Discrete Semiconductor Products

NRND

PMV55ENEA - 60 V, N-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMV55ENEAR

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	478 mW, 8.36 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Grade	Rds On (Max) @ Id, Vgs	Qualification	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Freescale Semiconductor - NXP PMV55ENEAR	-55 °C	150 °C	Surface Mount	Automotive	60 mOhm	AEC-Q101	20 V	MOSFET (Metal Oxide)	60 V	8.36 W 478 mW	2.7 V	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	N-Channel	19 nC	TO-236AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 3.1A (Ta) 478mW (Ta), 8.36W (Tc) Surface Mount TO-236AB

Technical documentation and resources