Discrete Semiconductor Products

ER1006_T0_00001

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10A/600V/SUPERFAST REC. RECT./LEADED/GP

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Discrete Semiconductor Products

Active

10A/600V/SUPERFAST REC. RECT./LEADED/GP

Technical Specifications

Parameters and characteristics for this part

Specification	ER1006_T0_00001

Capacitance @ Vr, F	62 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Technology	Diode Configuration	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If
Panjit International Inc. ER1006FCT_T0_00001	TO-220-3 Full Pack	1.7 V	600 V	10 A	Standard	1 Pair Common Cathode	200 mA 500 ns	35 ns	-55 °C	150 °C	ITO-220AB	Through Hole	1 µA
Panjit International Inc. ER1006F_T0_00001	TO-220-2 Full Pack Isolated Tab		600 V		Standard		200 mA 500 ns	50 ns	-55 °C	150 °C	ITO-220AC	Through Hole	1 µA	10 A	62 pF	1.7 V
Panjit International Inc. ER1006_T0_00001	TO-220-2		600 V		Standard		200 mA 500 ns	50 ns	-55 °C	150 °C	TO-220AC	Through Hole	1 µA	10 A	62 pF	1.7 V

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General part information

Diode 600 V 10A Through Hole TO-220AC

Technical documentation and resources