Discrete Semiconductor Products

NDPL070N10BG

Obsolete

MOSFET N-CH 100V 70A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 70A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	NDPL070N10BG

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	2010 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2.1 W, 72 W
Rds On (Max) @ Id, Vgs	10.8 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
ON Semiconductor NDPL070N10BG	Through Hole	N-Channel	26 nC	2010 pF	175 °C	TO-220-3	10 V 15 V	20 V	100 V	MOSFET (Metal Oxide)	TO-220-3	70 A	10.8 mOhm	2.1 W 72 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 70A (Ta) 2.1W (Ta), 72W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available