Discrete Semiconductor Products

PJQ5448-AU_R2_000A1

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40V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

40V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5448-AU_R2_000A1

Current - Continuous Drain (Id) @ 25°C	9.6 A, 50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1040 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	65.2 W, 2.4 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification
Panjit International Inc. PJQ5448_R2_00001	9.6 A 50 A	4.5 V 10 V	Surface Mount	N-Channel	11 mOhm	150 °C	-55 °C	1040 pF	2 W 54 W	MOSFET (Metal Oxide)	8-PowerVDFN	20 V	2.5 V	40 V	DFN5060-8	10 nC
Panjit International Inc. PJQ5448-AU_R2_000A1	9.6 A 50 A	4.5 V 10 V	Surface Mount	N-Channel	11 mOhm	175 °C	-55 °C	1040 pF	2.4 W 65.2 W	MOSFET (Metal Oxide)	8-PowerVDFN	20 V	2.5 V	40 V	DFN5060-8	10 nC	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 9.6A (Ta), 50A (Tc) 2.4W (Ta), 65.2W (Tc) Surface Mount DFN5060-8

Technical documentation and resources