Discrete Semiconductor Products

FDC6322C

Obsolete

MOSFET N/P-CH 25V 0.22A SSOT6

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 25V 0.22A SSOT6

Technical Specifications

Parameters and characteristics for this part

Specification	FDC6322C

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	220 mA, 460 mA
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	9.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power - Max [Max]	FET Feature	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Configuration	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)
ON Semiconductor FDC6322C	9.5 pF	4 Ohm	0.7 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	700 mW	Logic Level Gate	SuperSOT™-6	220 mA 460 mA	N and P-Channel	1.5 V	Surface Mount	SOT-23-6 Thin TSOT-23-6	25 V
ON Semiconductor FDC6322C	9.5 pF	4 Ohm	0.7 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	700 mW	Logic Level Gate	SuperSOT™-6	220 mA 460 mA	N and P-Channel	1.5 V	Surface Mount	SOT-23-6 Thin TSOT-23-6	25 V

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General part information

Mosfet Array 25V 220mA, 460mA 700mW Surface Mount SuperSOT™-6

Technical documentation and resources