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INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

FDPF041N06BL1

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60 V, 77 A, 4.1 MΩ

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INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

FDPF041N06BL1

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 60 V, 77 A, 4.1 MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDPF041N06BL1
Current - Continuous Drain (Id) @ 25°C77 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]69 nC
Input Capacitance (Ciss) (Max) @ Vds5690 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max) [Max]44.1 W
Rds On (Max) @ Id, Vgs4.1 mOhm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 315$ 1.15
315$ 1.15

Description

General part information

FDPF041N06BL1 Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources