Discrete Semiconductor Products
RFN2LB6STBR1
ActiveRohm Semiconductor
600V 2A 16NS, DO-214AA(SMB), SUPER FAST RECOVERY DIODE
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Discrete Semiconductor Products
RFN2LB6STBR1
ActiveRohm Semiconductor
600V 2A 16NS, DO-214AA(SMB), SUPER FAST RECOVERY DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RFN2LB6STBR1 |
|---|---|
| Current - Average Rectified (Io) | 2 A |
| Current - Reverse Leakage @ Vr | 1 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | SMB, DO-214AA |
| Reverse Recovery Time (trr) | 35 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | SMBP |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2988 | $ 1.18 | |
Description
General part information
RFN2LB6S Series
RFN2LB6S is a silicon epitaxial planar type super fast recovery diode featuring low VFand low switching loss. Ideal for general rectification applications.
Documents
Technical documentation and resources