Discrete Semiconductor Products

KSA1182YMTF

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KSA1182YMTF

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

PNP Epitaxial Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Mounting Type	Frequency - Transition
ON Semiconductor KSA1182YMTF	30 V	250 mV	SOT-23-3	500 mA	150 mW	150 °C	SC-59 SOT-23-3 TO-236-3	120	100 nA	PNP	Surface Mount	200 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	8876	$ 0.03

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources