Discrete Semiconductor Products

AON1620

Obsolete

MOSFET N-CH 12V 4A 6DFN

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 12V 4A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON1620

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerUFDFN
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs [Max]	22 mOhm
Supplier Device Package	6-DFN
Supplier Device Package [x]	1.6
Supplier Device Package [y]	1.6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Package / Case	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AON1610	8 V	29 mOhm	1.1 V	1.8 W	MOSFET (Metal Oxide)	6-DFN	1.6	1.6	6-PowerUFDFN	N-Channel	Surface Mount	14 nC	4 A	1.5 V 4.5 V	748 pF	20 V	150 °C	-55 °C
Alpha & Omega Semiconductor Inc. AON1620	8 V		1 V	1.8 W	MOSFET (Metal Oxide)	6-DFN	1.6	1.6	6-PowerUFDFN	N-Channel	Surface Mount		4 A	1.5 V 4.5 V		12 V	150 °C	-55 °C	22 mOhm	12 nC	770 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00