Discrete Semiconductor Products

1N3210

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DIODE GEN PURP 200V 15A DO203AB

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Discrete Semiconductor Products

Active

DIODE GEN PURP 200V 15A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	1N3210

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-203AB
Supplier Device Package	DO-5
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.5 V

Part	Technology	Speed [Min]	Supplier Device Package	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor 1N3210	Standard	200 mA 500 ns	DO-203AB	DO-5	DO-203AB DO-5 Stud	200 V	Stud Mount	15 A	10 µA	175 ░C	-65 C	1.5 V

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General part information

Diode 200 V 15A Stud Mount DO-203AB (DO-5)

Technical documentation and resources