Discrete Semiconductor Products

PJL9802_R2_00001

NRND

MOSFET 2N-CH 30V 5A 8SOP

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Discrete Semiconductor Products

NRND

MOSFET 2N-CH 30V 5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	PJL9802_R2_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	5.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	235 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max	1.7 W
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Package / Case	Package / Case	Power - Max	Mounting Type	Vgs(th) (Max) @ Id	Configuration	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Operating Temperature [Max]	Operating Temperature [Min]
Panjit International Inc. PJL9802_R2_00001	5.8 nC	30 V	0.154 in	8-SOIC	3.9 mm	1.7 W	Surface Mount	2.1 V	2 N-Channel (Dual)	5 A	235 pF	8-SOP	MOSFET (Metal Oxide)	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 5A (Ta) 1.7W (Ta) Surface Mount 8-SOP

Technical documentation and resources