Discrete Semiconductor Products

SIZF5300DT-T1-GE3

Active

MOSFET 2N-CH 30V 35A PWRPAIR

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 30V 35A PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZF5300DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	35 A, 125 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-PowerPair™
Power - Max	4.5 W, 56.8 W
Rds On (Max) @ Id, Vgs [Max]	2.43 mOhm
Supplier Device Package	PowerPAIR® 3x3FS
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case
Vishay General Semiconductor - Diodes Division SIZF5300DT-T1-GE3	PowerPAIR® 3x3FS	MOSFET (Metal Oxide)	2.43 mOhm	35 A 125 A	32 nC	4.5 W 56.8 W	2 N-Channel (Dual)	1480 pF	2 V	30 V	-55 °C	150 °C	Surface Mount	12-PowerPair™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 35A (Ta), 125A (Tc) 4.5W (Ta), 56.8W (Tc) Surface Mount PowerPAIR® 3x3FS

Technical documentation and resources