Specification	SSM3K35CTC,L3F

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	36 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	CST3C
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM3K35 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.18 A, 3.0 Ω@4V, SOT-883(CST3)

Part	Package / Case	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Technology	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage SSM3K35CT,L3F	SC-101 SOT-883	CST3	N-Channel	4 V	1.2 V	Surface Mount	MOSFET (Metal Oxide)	100 mW	10 V	20 V	180 mA	3 Ohm	150 °C	9.5 pF	1 V
Toshiba Semiconductor and Storage SSM3K35MFV(TPL3)	SOT-723	VESM	N-Channel	4 V	1.2 V	Surface Mount	MOSFET (Metal Oxide)		10 V	20 V	180 mA	3 Ohm	150 °C	9.5 pF	1 V	150 mW
Toshiba Semiconductor and Storage SSM3K35CTC,L3F	SC-101 SOT-883	CST3C	N-Channel	4.5 V	1.2 V	Surface Mount	MOSFET (Metal Oxide)	500 mW	10 V	20 V	250 mA	1.1 Ohm	150 °C	36 pF	1 V		0.34 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.18 A, 3.0 Ω@4V, SOT-883(CST3)

Technical documentation and resources