Discrete Semiconductor Products

FDMJ1032C

Obsolete

MOSFET N/P-CH 20V 3.2A/2.5A SC75

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V 3.2A/2.5A SC75

Technical Specifications

Parameters and characteristics for this part

Specification	FDMJ1032C

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.2 A, 2.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	3 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-WFDFN Exposed Pad
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	SC-75, MicroFET
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power - Max [Max]	Mounting Type	Drain to Source Voltage (Vdss)	FET Feature	Configuration	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMJ1032C	SC-75 MicroFET	6-WFDFN Exposed Pad	-55 °C	150 °C	270 pF	2.5 A 3.2 A	90 mOhm	1.5 V	800 mW	Surface Mount	20 V	Logic Level Gate	N and P-Channel	MOSFET (Metal Oxide)	3 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 3.2A, 2.5A 800mW Surface Mount SC-75, MicroFET

Technical documentation and resources