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MMBT2222AWT1G
Discrete Semiconductor Products

2V7002WT1G

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 310 MA, 1.6 OHM, SC-70 (SOT-323), 3 PINS, SURFACE MOUNT

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MMBT2222AWT1G
Discrete Semiconductor Products

2V7002WT1G

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 60 V, 310 MA, 1.6 OHM, SC-70 (SOT-323), 3 PINS, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification2V7002WT1G
Current - Continuous Drain (Id) @ 25°C310 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds24.5 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max)280 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.6 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.28
10$ 0.17
100$ 0.11
500$ 0.08
1000$ 0.07
Digi-Reel® 1$ 0.28
10$ 0.17
100$ 0.11
500$ 0.08
1000$ 0.07
Tape & Reel (TR) 3000$ 0.06
6000$ 0.05
9000$ 0.05
15000$ 0.05
21000$ 0.04
30000$ 0.04
75000$ 0.04
150000$ 0.03
NewarkEach (Supplied on Full Reel) 30000$ 0.04
ON SemiconductorN/A 1$ 0.05

Description

General part information

2V7002W Series

Automotive Power MOSFET ideal for low power applications. 60V, 115mA, 7.5 Ohm, Single N-Channel, SOT-23. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.