Discrete Semiconductor Products

PHD55N03LTA,118

Obsolete

MOSFET N-CH 25V 55A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 55A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD55N03LTA,118

Current - Continuous Drain (Id) (Tc)	55 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	85 W
Rds On (Max)	14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

Part	Rds On (Max)	FET Type	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Technology	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Package / Case	Vgs (Max)
NXP USA Inc. PHD55N03LTA,118	14 mOhm	N-Channel	Surface Mount	-55 °C	175 °C	DPak	MOSFET (Metal Oxide)	20 nC	55 A	10 V	5 V	25 V	85 W	950 pF	2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 25 V 55A (Tc) 85W (Tc) Surface Mount DPAK

Technical documentation and resources