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ISL6625ACRZ-TK
Integrated Circuits (ICs)

RAA220001GNP#HA0

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Renesas Electronics Corporation

SYNCHRONOUS RECTIFIED BUCK MOSFET DRIVER

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ISL6625ACRZ-TK
Integrated Circuits (ICs)

RAA220001GNP#HA0

Active
Renesas Electronics Corporation

SYNCHRONOUS RECTIFIED BUCK MOSFET DRIVER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRAA220001GNP#HA0
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Gate TypeMOSFET (N-Channel)
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-VFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]31 ns
Rise / Fall Time (Typ) [custom]18 ns
Supplier Device Package8-DFN (2x2)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 6000$ 0.35
12000$ 0.34
18000$ 0.33
30000$ 0.33

Description

General part information

RAA220001 Series

The RAA220001 is a high frequency MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous rectified buck converter topology. In the RAA220001, the upper and lower gates are both driven to an externally applied voltage that provides the capability to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The RAA220001 has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. This driver also has an overvoltage protection feature that is operational while VCCis below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) through a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This design is dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted.

Documents

Technical documentation and resources