Discrete Semiconductor Products

UF8CT-E3/4W

Obsolete

DIODE GEN PURP 150V 8A ITO220AC

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 150V 8A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	UF8CT-E3/4W

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	20 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.02 V

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Package / Case	Speed	Technology	Current - Average Rectified (Io)	Supplier Device Package
Vishay General Semiconductor - Diodes Division UF8CT-E3/4W	10 µA	150 °C	-55 °C	Through Hole	1.02 V	20 ns	TO-220-2 Full Pack Isolated Tab	200 mA 500 ns	Standard	8 A	ITO-220AC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 150 V 8A Through Hole ITO-220AC

Technical documentation and resources

No documents available