Discrete Semiconductor Products

CSD19503KCS

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80-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE TO-220, 9.2 MOHM

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Discrete Semiconductor Products

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80-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE TO-220, 9.2 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD19503KCS

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	2730 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	9.2 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

80-V, N channel NexFET™ power MOSFET, single TO-220, 9.2 mOhm

Part	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD19503KCS	Through Hole	3.4 V	2730 pF	TO-220-3	-55 °C	175 ░C	TO-220-3	20 V	188 W	MOSFET (Metal Oxide)	6 V 10 V	80 V	N-Channel	9.2 mOhm	36 nC	100 A

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General part information

This 80V, 7.6mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources