Specification	FCB36N60NTM

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	112 nC
Input Capacitance (Ciss) (Max) @ Vds	4785 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	312 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FCB36N60N Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600V, 25A, 125mΩ, D2PAK

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
ON Semiconductor FCB36N60NTM	TO-263 (D2PAK)	112 nC	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	312 W	30 V	4785 pF	N-Channel	36 A	Surface Mount	-55 °C	150 °C	10 V	4 V	90 mOhm	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCB36N60N Series

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.