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SOT 23-3
Discrete Semiconductor Products

MVSF2N02ELT1G

NRND
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 20V, 2.8A, 85MΩ

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SOT 23-3
Discrete Semiconductor Products

MVSF2N02ELT1G

NRND
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 20V, 2.8A, 85MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationMVSF2N02ELT1G
Current - Continuous Drain (Id) @ 25°C2.8 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]3.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]150 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.25 W
Rds On (Max) @ Id, Vgs [Max]85 mOhm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.22
10$ 0.77
100$ 0.51
500$ 0.39
1000$ 0.36
Digi-Reel® 1$ 1.22
10$ 0.77
100$ 0.51
500$ 0.39
1000$ 0.36
Tape & Reel (TR) 3000$ 0.31
6000$ 0.29
9000$ 0.28
15000$ 0.27
NewarkEach (Supplied on Full Reel) 3000$ 0.37
6000$ 0.34
12000$ 0.32
18000$ 0.30
30000$ 0.28
ON SemiconductorN/A 1$ 0.39

Description

General part information

MVSF2N02EL Series

Automotive Power MOSFET.These miniature surface mount MOSFETs low RDS(on)assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.