Zenode.ai Logo
Beta
Log InSign Up
TO-126
Discrete Semiconductor Products

BD1396STU

Obsolete
ON Semiconductor

1.5 A, 80 V NPN POWER BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheetDatasheet+1
TO-126
Discrete Semiconductor Products

BD1396STU

Obsolete
ON Semiconductor

1.5 A, 80 V NPN POWER BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

DocumentsDatasheetDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationBD1396STU
Current - Collector (Ic) (Max) [Max]1.5 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]1.25 W
Supplier Device PackageTO-126-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BD1396 Series

This series of plastic, NPN Power Bipolar Junction Transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.