Zenode.ai Logo
Beta
TO-263-3
Discrete Semiconductor Products

SIHB22N60S-E3

Obsolete

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
TO-263-3
Discrete Semiconductor Products

SIHB22N60S-E3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIHB22N60S-E3
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]110 nC
Input Capacitance (Ciss) (Max) @ Vds2810 pF
Mounting TypeSurface Mount
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SIHB22 Series

N-Channel 600 V 22A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources