Discrete Semiconductor Products

MJL21196G

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TRANS GP BJT NPN 250V 16A 200000MW 3-PIN(3+TAB) TO-264 TUBE

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Discrete Semiconductor Products

Active

TRANS GP BJT NPN 250V 16A 200000MW 3-PIN(3+TAB) TO-264 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	MJL21196G

Current - Collector (Ic) (Max) [Max]	16 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	200 W
Supplier Device Package	TO-264
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	4 V
Voltage - Collector Emitter Breakdown (Max)	250 V

Part	Power - Max [Max]	Frequency - Transition	Package / Case	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]
ON Semiconductor MJL21196G	200 W	4 MHz	TO-264-3 TO-264AA	16 A	4 V	250 V	25	Through Hole	150 °C	-65 °C	NPN	TO-264	100 µA

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General part information

Bipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-264

Technical documentation and resources