Discrete Semiconductor Products

SI4470EY-T1-GE3

Obsolete

MOSFET N-CH 60V 9A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 9A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4470EY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.85 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI4470EY-T1-GE3	N-Channel	9 A	-55 °C	175 ░C	20 V	Surface Mount	60 V	11 mOhm	2 V	70 nC	8-SOIC	3.9 mm	0.154 in	8-SOIC	6 V 10 V	MOSFET (Metal Oxide)	1.85 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 9A (Ta) 1.85W (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available