Discrete Semiconductor Products

AOTS21313C

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MOSFET P-CH 30V 7.3A 6TSOP

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Discrete Semiconductor Products

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MOSFET P-CH 30V 7.3A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	AOTS21313C

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-457, SC-74
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type
Alpha & Omega Semiconductor Inc. AOTS21313C	1100 pF	SC-74 SOT-457	7.3 A	32 mOhm	2.7 W	6-TSOP	2.2 V	MOSFET (Metal Oxide)	4.5 V 10 V	30 V	Surface Mount	20 V	150 °C	-55 °C	P-Channel

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General part information

P-Channel 30 V 7.3A (Ta) 2.7W (Ta) Surface Mount 6-TSOP

Technical documentation and resources