Discrete Semiconductor Products
RJP4009ANS-01#Q6
ObsoleteRenesas Electronics Corporation
NCH IGBT FOR STROBE FLASH
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DocumentsRJP4009ANS-01#Q6 | Datasheet
Discrete Semiconductor Products
RJP4009ANS-01#Q6
ObsoleteRenesas Electronics Corporation
NCH IGBT FOR STROBE FLASH
Deep-Dive with AI
DocumentsRJP4009ANS-01#Q6 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | RJP4009ANS-01#Q6 |
|---|---|
| Current - Collector Pulsed (Icm) | 150 A |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-VDFN |
| Power - Max [Max] | 1.8 W |
| Supplier Device Package | 8-VSON (3x4.4) |
| Vce(on) (Max) @ Vge, Ic | 9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
RJP4009ANS Series
The RJP4009ANS is a 400V N-channel insulated-gate bipolar transistor (IGBT) that is available in an 8-VSON package and can be used for strobe flashes for cameras.
Documents
Technical documentation and resources