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ROHM TT8K2TR

Discrete Semiconductor Products

TT8K2TR

NRND

Rohm Semiconductor

MOSFET, DUAL N-CH, 30V, TSST

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Search across all available documentation for this part.

DocumentsTransistor, MOSFET Flammability TSST8 Part Marking +2

ROHM TT8K2TR

Discrete Semiconductor Products

TT8K2TR

NRND

Rohm Semiconductor

MOSFET, DUAL N-CH, 30V, TSST

Deep-Dive with AI

DocumentsTransistor, MOSFET Flammability TSST8 Part Marking +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TT8K2TR

Configuration	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	8-TSST
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.60
		10	$ 0.52
	Digi-Reel®	1	$ 0.91
		10	$ 0.57
	N/A	0	$ 0.00
	Tape & Reel (TR)	3000	$ 0.28
Newark	Each (Supplied on Cut Tape)	1	$ 0.34

Description

General part information

TT8K2 Series

Mosfet Array 30V 2.5A 1.25W Surface Mount 8-TSST

Documents

Technical documentation and resources

Transistor, MOSFET Flammability

Related Document

TSST8 Part Marking

Related Document

TSMT8 TR Taping Spec

Datasheet

TT8K2 Series

Part	FET Feature	Operating Temperature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Supplier Device Package	Technology	Configuration
Rohm Semiconductor TT8K2TR	Logic Level Gate	150 °C	1.5 V	180 pF	30 V	Surface Mount	3.2 nC	90 mOhm	1.25 W	8-TSST	MOSFET (Metal Oxide)	2 N-Channel (Dual)