Discrete Semiconductor Products

2SK2103T100

NRND

MOSFET N-CH 30V 2A MPT3

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 2A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2103T100

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	230 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	MPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature	FET Type	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Rohm Semiconductor 2SK2103T100	Surface Mount	230 pF	TO-243AA	2 A	MPT3	150 °C	N-Channel	MOSFET (Metal Oxide)	2.5 V	500 mW	400 mOhm	30 V	20 V	4 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 2A (Ta) 500mW (Ta) Surface Mount MPT3

Technical documentation and resources