Specification	PEMH19,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Resistor - Base (R1)	22 kOhms
Supplier Device Package	SOT-666
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PEMH19 Series

50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open

Part	Transistor Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Resistor - Base (R1)	Power - Max [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]
Freescale Semiconductor - NXP PEMH19,115	2 NPN - Pre-Biased (Dual)	SOT-666	100	100 mA	1 µA	SOT-563 SOT-666	22 kOhms	300 mW	Surface Mount	150 mV	50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN/NPN Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources