Specification	SSM3K337R,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	38 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3 nC
Input Capacitance (Ciss) (Max) @ Vds	120 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.7 V

SSM3K337R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET + Active Clamp Zener, 38 V, 2.0 A, 0.15 Ω@10V, SOT-23F

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs (Max)	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM3K337R,LF	120 pF	3 nC	1 W	SOT-23-3 Flat Leads	150 mOhm	Surface Mount	2 A	N-Channel	38 V	150 °C	20 V	MOSFET (Metal Oxide)	SOT-23F	4 V	10 V	1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET + Active Clamp Zener, 38 V, 2.0 A, 0.15 Ω@10V, SOT-23F

Technical documentation and resources