Discrete Semiconductor Products

JAN2N7369

Active

TRANS PNP 80V 10A TO254AA

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

TRANS PNP 80V 10A TO254AA

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N7369

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-254AA, TO-254-3
Power - Max [Max]	115 W
Qualification	MIL-PRF-19500/621
Supplier Device Package	TO-254AA
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Grade	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Package / Case	Mounting Type
Microsemi Corporation JAN2N7369	80 V	MIL-PRF-19500/621	50	PNP	Military	1 V	115 W	200 °C	-65 °C	TO-254AA	TO-254-3 TO-254AA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 80 V 10 A 115 W Through Hole TO-254AA

Technical documentation and resources

No documents available