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TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

BC447

Obsolete

ON Semiconductor

HIGH VOLTAGE TRANSISTORS

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DocumentsDatasheet Package Drawing-29-10-TO-92 (TO-226) 1 WATT

TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

BC447

Obsolete

ON Semiconductor

HIGH VOLTAGE TRANSISTORS

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DocumentsDatasheet Package Drawing-29-10-TO-92 (TO-226) 1 WATT

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC447

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BC447 Series

PNP Silicon

Documents

Technical documentation and resources

Datasheet

Package Drawing-29-10-TO-92 (TO-226) 1 WATT

Package Drawing

BC447 Series

High Voltage Transistors

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Transistor Type	Supplier Device Package	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor BC447	TO-226-3 TO-92-3 Long Body	300 mA	200 MHz	NPN	TO-92	TO-226	50	625 mW	-55 °C	150 °C	100 nA	80 V	Through Hole	250 mV
ON Semiconductor BC447G	TO-226-3 TO-92-3 Long Body	300 mA	200 MHz	NPN	TO-92	TO-226	50	625 mW	-55 °C	150 °C	100 nA	80 V	Through Hole	250 mV