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EGF1B-1HE3_A/I
Discrete Semiconductor Products

EGF1T-E3/5CA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.3KV 1A DO214BA

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EGF1B-1HE3_A/I
Discrete Semiconductor Products

EGF1T-E3/5CA

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.3KV 1A DO214BA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationEGF1T-E3/5CA
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-214BA
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-214BA (GF1)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1300 V
Voltage - Forward (Vf) (Max) @ If3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.63
10$ 0.54
100$ 0.37
500$ 0.29
1000$ 0.24
2000$ 0.21
Digi-Reel® 1$ 0.63
10$ 0.54
100$ 0.37
500$ 0.29
1000$ 0.24
2000$ 0.21
Tape & Reel (TR) 6500$ 0.20
13000$ 0.19
32500$ 0.18
NewarkEach (Supplied on Full Reel) 5000$ 0.25
10000$ 0.23
20000$ 0.21
30000$ 0.20
50000$ 0.19

Description

General part information

EGF1 Series

Diode 1300 V 1A Surface Mount DO-214BA (GF1)

Documents

Technical documentation and resources