Discrete Semiconductor Products

GB02SLT12-220

Obsolete

DIODE SIL CARB 1.2KV 2A TO220-2

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.2KV 2A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	GB02SLT12-220

Capacitance @ Vr, F	138 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor GB02SLT12-214	DO-214AA SMB	2 A	131 pF	50 µA	SiC (Silicon Carbide) Schottky	Surface Mount	DO-214AA	1.8 V	1.2 kV	175 ░C	-55 °C	500 mA
GeneSiC Semiconductor GB02SLT12-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 A	131 pF	50 µA	SiC (Silicon Carbide) Schottky	Surface Mount	TO-252	2 A	1.2 kV	175 ░C	-55 °C	500 mA	1.8 V
GeneSiC Semiconductor GB02SLT12-220	TO-220-2	2 A	138 pF	50 µA	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	2 A	1.2 kV	175 ░C	-55 °C	500 mA	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.80

General part information

Diode 1200 V 2A Through Hole TO-220-2

Technical documentation and resources

No documents available