Discrete Semiconductor Products

SI7149DP-T1-GE3

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MOSFET P-CH 30V 50A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 30V 50A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7149DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	147 nC
Input Capacitance (Ciss) (Max) @ Vds	4590 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI7149DP-T1-GE3	PowerPAK® SO-8	2.5 V	4.5 V 10 V	4590 pF	147 nC	P-Channel	Surface Mount	MOSFET (Metal Oxide)	25 V	30 V	PowerPAK® SO-8	50 A	-55 °C	150 °C	5.2 mOhm

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General part information

P-Channel 30 V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources