Specification	NVTYS014P04M8LTWG

Current - Continuous Drain (Id) @ 25°C	10.4 A
Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	16900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	88 W
Power Dissipation (Max)	3.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13.5 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVTYS014P04M8 Series

MOSFET – Power, Single, P-Channel,

Part	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Qualification	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Power Dissipation (Max)
ON Semiconductor NVTYS014P04M8LTWG	Automotive	16900 pF	-55 °C	175 ░C	P-Channel	8-LFPAK56 SOT-1205	8-LFPAK	40 V	AEC-Q101	20 V	4.5 V 10 V	Surface Mount	27 nC	MOSFET (Metal Oxide)	10.4 A	53 A	3 V	13.5 mOhm	88 W	3.1 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, P-Channel, −40 V, −53 A, 13.5 mΩ

Technical documentation and resources