Discrete Semiconductor Products

PEMF21,115

Obsolete

TRANS PREBIAS 1NPN 1PNP SOT666

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Discrete Semiconductor Products

Obsolete

TRANS PREBIAS 1NPN 1PNP SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	PEMF21,115

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
Frequency - Transition	280 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SOT-666
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic [Max]	300 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max)	12 V, 50 V

Part	Power - Max [Max]	Package / Case	Current - Collector (Ic) (Max)	Supplier Device Package	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Frequency - Transition
Freescale Semiconductor - NXP PEMF21,115	300 mW	SOT-563 SOT-666	100 mA 500 mA	SOT-666	Surface Mount	1 NPN Pre-Biased 1 PNP	250 mV 300 mV	12 V 50 V	1 µA	10 kOhms	280 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 280MHz 300mW Surface Mount SOT-666

Technical documentation and resources