Discrete Semiconductor Products

PBSS5540ZF

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TRANS GP BJT PNP 40V 5A 2000MW 4-PIN(3+TAB) SC-73 T/R

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Discrete Semiconductor Products

Active

TRANS GP BJT PNP 40V 5A 2000MW 4-PIN(3+TAB) SC-73 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5540ZF

Current - Collector (Ic) (Max) [Max]	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	120 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	160 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

40 V, 5 A PNP low VCEsat transistor

Part	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Transistor Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Grade	Qualification
Nexperia USA Inc. PBSS5540Z,115	100 nA	SOT-223	40 V	TO-261-4 TO-261AA	PNP	160 mV	150	120 MHz	2 W	Surface Mount	5 A	150 °C
Nexperia USA Inc. PBSS5540X,135	100 nA		40 V	TO-243AA	PNP	375 mV	150	60 MHz	1.6 W	Surface Mount	4 A	150 °C	Automotive	AEC-Q100
Nexperia USA Inc. PBSS5540ZF	100 nA	SOT-223	40 V	TO-261-4 TO-261AA	PNP	160 mV	150	120 MHz	2 W	Surface Mount	5 A	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP low VCEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device(SMD) plastic package.

Technical documentation and resources